SK Hynix Delivers 12-Layer HBM4E Samples to Major Clients

SK Hynix Launches HBM4E for Next-Generation AI Applications

SK Hynix has started delivering samples of its 7th-generation high-bandwidth memory (HBM4E) with 12 layers to major clients. As a leading player in the HBM market, the company is accelerating the supply of next-generation products by leveraging its extensive expertise.

On the 18th, SK Hynix announced that it has provided samples of its HBM4E to key clients. HBM is a type of memory semiconductor that vertically stacks multiple DRAMs to enhance data processing speed. It plays a crucial role in AI accelerators such as those developed by NVIDIA. HBM4E is the successor to HBM4 and will be used in NVIDIA’s upcoming AI accelerator ‘Vera Rubin,’ scheduled for release in the second half of this year. The ‘Vera Rubin Ultra,’ set for launch next year, will also incorporate HBM4E.

Enhanced Performance and Efficiency

SK Hynix’s HBM4E offers significant improvements in both performance and power efficiency compared to the previous generation, HBM4. According to the company, it achieves a maximum data processing speed of 16Gbps and improves energy efficiency by over 20%. These enhancements make it ideal for AI training and inference tasks, which require high-speed data processing.

While HBM4 used 10-nanometer-class fifth-generation (1b) DRAM, HBM4E incorporates 10-nanometer-class sixth-generation (1c) DRAM. The company explained that HBM4E reduces data transmission delays through the latest interface and design optimization, ensuring stable operation even in high-bandwidth environments. This improvement is expected to further enhance the processing efficiency of next-generation AI data centers and large-scale computing systems.

Advanced Packaging Technology

SK Hynix revealed that it applied the ‘Advanced MR-MUF’ process to HBM4E. MR-MUF is a packaging process that injects liquid protective material into the spaces between stacked semiconductor chips and hardens it. The Advanced MR-MUF improves structural stability and reduces thermal resistance by approximately 17% compared to HBM4. This ensures stable memory operation even in high-performance computing environments.

Strategic Vision for AI Innovation

Ahn Hyun, SK Hynix’s President and Chief Development Officer (CDO), stated, “By continuing to leverage the industry’s top-tier technological competitiveness and mass production capabilities in the HBM4E product, we have laid the foundation to lead AI innovation. We will solidify our technological leadership as a full-stack AI memory creator by proactively implementing the values demanded by the market in collaboration with our partners.”

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